VLSI fabrication principles: silicon and gallium arsenide

Ghandhi, Sorab K.

dc.contributor.author	Ghandhi, Sorab K.
dc.date.accessioned	2015-09-07T19:43:49Z
dc.date.available	2015-09-07T19:43:49Z
dc.date.issued	1994
dc.identifier.citation	New York : John Wiley, 1994	en_US
dc.identifier.isbn	0-471-58005-8
dc.identifier.uri	http://hdl.handle.net/123456789/601
dc.description.abstract	Fully updated with the latest technologies, this edition covers the fundamental principles underlying fabrication processes for semiconductor devices along with integrated circuits made from silicon and gallium arsenide. Stresses fabrication criteria for such circuits as CMOS, bipolar, MOS, FET, etc. These diverse technologies are introduced separately and then consolidated into complete circuits.	en_US
dc.language.iso	en	en_US
dc.publisher	John Wiley	en_US
dc.subject	Integrated circuits	en_US
dc.subject	Cillicon	en_US
dc.subject	Gallium arsenide	en_US
dc.title	VLSI fabrication principles: silicon and gallium arsenide	en_US
dc.type	Book	en_US